Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the electric field control...

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Bibliographic Details
Published in:IEEE electron device letters 2012-02, Vol.33 (2), p.167-169
Main Authors: Lattanzio, L., De Michielis, L., Ionescu, A. M.
Format: Article
Language:English
Subjects:
Applied sciences
Band-to-band tunneling (BTBT)
Computer simulation
Delay
Devices
Electric potential
electron-hole (EH) bilayer
Electronics
Exact sciences and technology
FETs
field-effect transistor (FET)
Gates
Germanium
Logic gates
Mathematical models
Performance evaluation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
subthreshold slope
Transistors
tunnel FET (TFET)
Tunneling
Tunnels (transportation)
Voltage
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Summary:In this letter, we present a novel device, the germanium electron-hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the electric field controlled by the gate. The device principle and performances are studied by 2-D numerical simulations. This device allows interesting features in terms of low operating voltage (
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2175898