ZrTiOx-Based Resistive Memory With MIS Structure Formed on Ge Layer

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Bibliographic Details
Published in:IEEE electron device letters 2012-03, Vol.33 (3), p.435-437
Main Authors: WU, Yung-Hsien, WU, Jia-Rong, HOU, Chin-Yao, LIN, Chia-Chun, WU, Min-Lin, CHEN, Lun-Lun
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2179914