ZrTiOx-Based Resistive Memory With MIS Structure Formed on Ge Layer

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Published in:IEEE electron device letters 2012-03, Vol.33 (3), p.435-437
Main Authors: WU, Yung-Hsien, WU, Jia-Rong, HOU, Chin-Yao, LIN, Chia-Chun, WU, Min-Lin, CHEN, Lun-Lun
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
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container_end_page 437
container_issue 3
container_start_page 435
container_title IEEE electron device letters
container_volume 33
creator WU, Yung-Hsien
WU, Jia-Rong
HOU, Chin-Yao
LIN, Chia-Chun
WU, Min-Lin
CHEN, Lun-Lun
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doi_str_mv 10.1109/LED.2011.2179914
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ispartof IEEE electron device letters, 2012-03, Vol.33 (3), p.435-437
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source IEEE Electronic Library (IEL) Journals
subjects Applied sciences
Compound structure devices
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
title ZrTiOx-Based Resistive Memory With MIS Structure Formed on Ge Layer
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