Physics-Based Modeling of GaN HEMTs

A thorough approach to the investigation of GaN-based high-electron mobility transistors by device simulation is demonstrated. Due to structure and material peculiarities, new comprehensive hydrodynamic models for the electron mobility are developed and calibrated. Relying on this setup, three diffe...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-03, Vol.59 (3), p.685-693
Main Authors: Vitanov, S., Palankovski, V., Maroldt, S., Quay, R., Murad, S., Rodle, T., Selberherr, S.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Applied sciences
Computational modeling
Electronics
Exact sciences and technology
Gallium compounds
Gallium nitride
HEMTs
Logic gates
Materials
MODFETs
semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
simulation software
Transistors
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Summary:A thorough approach to the investigation of GaN-based high-electron mobility transistors by device simulation is demonstrated. Due to structure and material peculiarities, new comprehensive hydrodynamic models for the electron mobility are developed and calibrated. Relying on this setup, three different independent device technologies are simulated and compared. We further study the pronounced decrease in the transconductance g m at higher gate bias. We show that the electric field distribution and the resulting carrier velocity quasi-saturation are the main source for the transconductance collapse.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2179118