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A Capacitance Type Chemical Sensor Based on AlPO4-5 Molecular Sieves

Thin films of AlPO4-5 molecular sieves have been employed as the dielectric phase in a capacitance type chemical sensor. AlPO4-5 was deposited onto titanium nitride (bottom electrode) coated silicon wafers by laser ablation. A subsequent hydrothermal treatment of the ablated AlPO4-5 films was found...

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Bibliographic Details
Published in:Chemistry of materials 1997-01, Vol.9 (1), p.380-386
Main Authors: Balkus, Kenneth J, Ball, Laura J, Gnade, Bruce E, Anthony, J. Mark
Format: Article
Language:English
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Summary:Thin films of AlPO4-5 molecular sieves have been employed as the dielectric phase in a capacitance type chemical sensor. AlPO4-5 was deposited onto titanium nitride (bottom electrode) coated silicon wafers by laser ablation. A subsequent hydrothermal treatment of the ablated AlPO4-5 films was found to enhance the crystallinity. The capacitance sensor configuration was completed by the deposition of Pd/Au pads (upper electrode) through a mask. AlPO4-5 based sensors exhibited significant changes in capacitance upon exposure to small molecules such as CO2, CO, N2, and H2O.
ISSN:0897-4756
1520-5002
DOI:10.1021/cm960041n