MOVPE growth of strain-compensated 1300 nm In1−xGaxAsyP1−y quantum well structures

Different concepts for achieving strain-compensated quantum well structures emitting at 1300 nm have been investigated. Structures employing up to eight compressively strained wells with the same x in well and barrier exhibits excellent structural and optical properties, including very high photolum...

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Bibliographic Details
Published in:Journal of crystal growth 1997-01, Vol.170 (1-4), p.122-126
Main Authors: Silfvenius, Christofer, Stålnacke, Björn, Landgren, Gunnar
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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Summary:Different concepts for achieving strain-compensated quantum well structures emitting at 1300 nm have been investigated. Structures employing up to eight compressively strained wells with the same x in well and barrier exhibits excellent structural and optical properties, including very high photoluminescence efficiency. Increased number of quantum wells beyond 8 resulted in deteriorated materials quality, most likely due to accumulated strain-induced roughness of the growing surface. Good laser characteristics, including T0 values of 64 K, were demonstrated for strain-compensated structures with tensile wells.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(96)00583-0