Domain Matching Epitaxial Growth of In2O3 Thin Films on α-Al2O3(0001)

• Published in: Crystal growth & design 2012-02, Vol.12 (2), p.1000-1007
• Main Authors: Zhang, K. H. L, Lazarov, V. K, Galindo, P. L, Oropeza, F. E, Payne, D. J, Lai, H. H.-C, Egdell, R. G
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystalline state (including molecular motions in solids); Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Theory of crystal structure, crystal symmetry; calculations and modeling
• ISSN: 1528-7483; 1528-7505
• DOI: 10.1021/cg201474h

Oxygen plasma assisted molecular beam epitaxy was used to grow thin films of In2O3 on α-Al2O3(0001) over a range of substrate temperatures between 300 and 750 °C. The crystal structures and morphologies were examined by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. In all cases, the thermodynamically stable body-centered cubic phase bcc-In2O3 predominates in the films, with an epitaxial relationship In2O3(111)∥Al2O3(0001) and In2O3 [11̅10]∥Al2O3[101̅0] determined by matching between the sublattice oxygen atoms in Al2O3(0001) and the In atoms in In2O3(111): this involves a 30° rotation of the epilayer unit cell relative to that of the substrate and a 3:2 coincidence structure. A minority fraction of metastable rhombohedral rh-In2O3(0001) can be stabilized for substrate temperatures below 550 °C due to the similarity in the bonding symmetries between rh-In2O3 and α-Al2O3. Despite the large mismatches between In2O3 and Al2O3 for the two epitaxial systems discussed above (−13.2% for bcc-In2O3 and +15.1% for rh-In2O3), we show that the epitaxy can be maintained in both cases by matching small but different integral multiples of lattice planes of the In2O3 and the substrate at the interface between the two. Thus, the strain is effectively released by dislocations localized at the interface. This so-called domain matching epitaxial growth mode may open up a new route to fabrication of high-quality crystalline thin films of oxides on highly mismatched substrates.