Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs

We present a theoretical study of the trap-charge-induced variability of threshold voltage in silicon-nanowire FETs. By exploiting full-quantum 3-D simulations, we determine the transfer characteristics in the presence of discrete trap charges at different positions in the gate-stack volume, and hen...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2012-05, Vol.59 (5), p.1462-1467
Main Authors: Bekaddour, A., Pala, M. G., Chabane-Sari, N., Ghibaudo, G.
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
FETs
Logic gates
Materials science
Molecular electronics, nanoelectronics
Nanoscale materials and structures: fabrication and characterization
Nonequilibrium Green's function (NEGF) method
Physics
Quantum wires
remote Coulomb scattering (RCS)
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
silicon-nanowire (Si NW) transistors (SNWTs)
Surface roughness
Threshold voltage
Transistors
variability
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a theoretical study of the trap-charge-induced variability of threshold voltage in silicon-nanowire FETs. By exploiting full-quantum 3-D simulations, we determine the transfer characteristics in the presence of discrete trap charges at different positions in the gate-stack volume, and hence, we compute the probability density function of these randomly distributed impurities. Assuming a Poisson distribution for the trap charge numbers, we estimate the statistics of the threshold voltage shift induced by such charged defects and evaluate the mean value and standard deviation of the threshold voltage for typical trap density values.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2186575