Radiation Effects in Si-NW GAA FET and CMOS Inverter: A TCAD Simulation Study

In this brief, we have analyzed the response of silicon-nanowire (Si-NW) gate-all-around (GAA) field-effect transistor to total ionizing dose (TID) effects and assessed the impact of single-event effects (SEEs) in simple inverter circuit built from such devices. The analysis of radiation effects is...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-05, Vol.59 (5), p.1563-1566
Main Authors: Kaushal, G., Rathod, S. S., Maheshwaram, S., Manhas, S. K., Saxena, A. K., Dasgupta, S.
Format: Article
Language:English
Subjects:
Alpha particles
Applied sciences
CMOS
CMOS integrated circuits
Cross-disciplinary physics: materials science
rheology
Design. Technologies. Operation analysis. Testing
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Integrated circuit modeling
Integrated circuits
Inverters
Logic gates
Materials science
MOSFET circuits
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
radiation effects
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon-nanowire (Si-NW) MOSFET
simulation
technology computer-aided design (TCAD)
Transistors
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Summary:In this brief, we have analyzed the response of silicon-nanowire (Si-NW) gate-all-around (GAA) field-effect transistor to total ionizing dose (TID) effects and assessed the impact of single-event effects (SEEs) in simple inverter circuit built from such devices. The analysis of radiation effects is carried out with 3-D technology computer-aided design simulations. Reliability of n-channel and p-channel Si-NW MOSFET is investigated for TID effects with gamma ray exposure. The transient effects at the device level are studied for alpha particle and heavy-ion strikes. It is found that Si-NW MOSFET is inherently hardened to TID effects. This result is in concordance with the earlier reported experimental results. However, we found that Si-NW CMOS inverter is not as tolerant to SEE, as Si-NW MOSFET is to TID. This study highlights the need for radiation-hardened Si-NW FET circuits against SEE.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2187656