Integration of Behavioral Models in the Full-Field TLM Method

The accurate simulation of digital circuits requires the inclusion of field phenomena. Issues such as signal integrity, crosstalk, and external EMI are of paramount importance in the design stage, due to the decreasing feature size and increasing clock frequency of modern digital systems. This paper...

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Bibliographic Details
Published in:IEEE transactions on electromagnetic compatibility 2012-04, Vol.54 (2), p.359-366
Main Authors: Scott, I., Kumar, V., Christopoulos, C., Thomas, D. W. P., Greedy, S., Sewell, P.
Format: Article
Language:English
Subjects:
Applied sciences
Behavioral models
Circuit properties
Computer simulation
Design. Technologies. Operation analysis. Testing
Digital
Digital circuits
Digital systems
Electric, optical and optoelectronic circuits
Electromagnetic compatibility
Electromagnetic interference
Electronic circuits
Electronics
Exact sciences and technology
hybrid methods
Inclusions
Information, signal and communications theory
input/output buffer information specification (IBIS)
Integrated circuit modeling
Integrated circuits
Load modeling
Logic gates
Mathematical models
numerical modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Telecommunications and information theory
Time domain analysis
Time varying systems
transmission-line modeling (TLM)
Wires
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Summary:The accurate simulation of digital circuits requires the inclusion of field phenomena. Issues such as signal integrity, crosstalk, and external EMI are of paramount importance in the design stage, due to the decreasing feature size and increasing clock frequency of modern digital systems. This paper addresses issues with the incorporation of field phenomena in the simulation of digital systems, by embedding behavioral descriptions of digital ICs into a full wave field model. The paper successfully simulates digital circuits incorporating the external electromagnetic interference (EMI) environment of operation; further research is required to incorporate the internal EMI effects in the IC silicon. The transmission-line modeling method is used for the field model, while the input/output buffer information specification models the digital IC behavior.
ISSN:0018-9375
1558-187X
DOI:10.1109/TEMC.2012.2183133