11.72-cm2 Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA2·s

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Bibliographic Details
Published in:IEEE electron device letters 2012, Vol.33 (6), p.764-766
Main Authors: SNOOK, M, HEARNE, H, WHITE, J, DAVIS, S, MCNUTT, T, VELIADIS, V, EL-HINNAWY, N, NECHAY, B, WOODRUFF, S, STAHLBUSH, R. E, HOWELL, R. S, GIORGI, D
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Circuits of signal characteristics conditioning (including delay circuits)
Design. Technologies. Operation analysis. Testing
Diodes
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0741-3106
1558-0563