Single Die Multiple 600 V Power Diodes With Deep Trench Terminations and Isolation

This paper presents a new concept for low cost and high reliability monolithic integration of vertical power devices. The concept relies on the creation of deep trench terminations on the edge of the device, thus allowing to avoid 3 D peak surface electric field levels whereas complete insulation of...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2011-11, Vol.26 (11), p.3423-3429
Main Authors: Vladimirova, K., Crebier, J.-C, Avenas, Y., Schaeffer, C.
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Dielectric materials
Diodes
Electric fields
Electric power
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Engineering Sciences
Exact sciences and technology
Insulation
Integrated circuits
Junctions
Metals
Monolithic integrated circuits
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
power semiconductor diodes
Prototypes
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Simulation
Substrates
switching converters
wafer scale integration
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Summary:This paper presents a new concept for low cost and high reliability monolithic integration of vertical power devices. The concept relies on the creation of deep trench terminations on the edge of the device, thus allowing to avoid 3 D peak surface electric field levels whereas complete insulation of the integrated power devices sharing the same backside contact electrode is guaranteed. Simulation results show that the stress of the electric field can be further reduced by introducing an angle on the trench termination walls. Power diodes in the range of 600 V with 87° wall angles of the 100-μm deep trench terminations are fabricated to demonstrate the feasibility and the effectiveness of the concept. The multidiode devices were experimentally tested under static and dynamic practical conditions. The fabricated prototypes fulfilled the initial design electrical specifications considering the breakdown voltage rating and demonstrated an excellent functional behavior. The implementation of the multidiode device into an interleaved converter is presented in this paper.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2011.2145390