Single Die Multiple 600 V Power Diodes With Deep Trench Terminations and Isolation

• Published in: IEEE transactions on power electronics 2011-11, Vol.26 (11), p.3423-3429
• Main Authors: Vladimirova, K., Crebier, J.-C, Avenas, Y., Schaeffer, C.
• Format: Article
• Language: English
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Dielectric materials; Diodes; Electric fields; Electric power; Electrical engineering. Electrical power engineering; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Engineering Sciences; Exact sciences and technology; Insulation; Integrated circuits; Junctions; Metals; Monolithic integrated circuits; Other multijunction devices. Power transistors. Thyristors; Power electronics, power supplies; power semiconductor diodes; Prototypes; Semiconductor diodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Simulation; Substrates; switching converters; wafer scale integration
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2011.2145390

This paper presents a new concept for low cost and high reliability monolithic integration of vertical power devices. The concept relies on the creation of deep trench terminations on the edge of the device, thus allowing to avoid 3 D peak surface electric field levels whereas complete insulation of the integrated power devices sharing the same backside contact electrode is guaranteed. Simulation results show that the stress of the electric field can be further reduced by introducing an angle on the trench termination walls. Power diodes in the range of 600 V with 87° wall angles of the 100-μm deep trench terminations are fabricated to demonstrate the feasibility and the effectiveness of the concept. The multidiode devices were experimentally tested under static and dynamic practical conditions. The fabricated prototypes fulfilled the initial design electrical specifications considering the breakdown voltage rating and demonstrated an excellent functional behavior. The implementation of the multidiode device into an interleaved converter is presented in this paper.