Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based RRAM With Ge Doping

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2012-04, Vol.59 (4), p.1203-1208
Main Authors: ZHONGRUI WANG, ZHU, W. G, DU, A. Y, WU, L, FANG, Z, TRAN, X. A, LIU, W. J, ZHANG, K. L, YU, H.-Y
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2182770