Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors

We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristi...

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Bibliographic Details
Published in:IEEE electron device letters 2012-07, Vol.33 (7), p.1006-1008
Main Authors: Sungsik Lee, Ahnood, A., Sambandan, S., Madan, A., Nathan, A.
Format: Article
Language:English
Subjects:
Amorphous semiconductor thin-film transistors (TFTs)
Amorphous silicon
Applied sciences
density of subgap states (subgap DOS)
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
field-effect mobility
Interface states
Iron
Logic gates
Photoconductivity
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Theoretical study. Circuits analysis and design
Thin film transistors
Transistors
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Description
Summary:We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2193657