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Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors
We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristi...
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| Published in: | IEEE electron device letters 2012-07, Vol.33 (7), p.1006-1008 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c359t-10d1400f6e9232aba182c53f5f8dadfc4de0c2b008e0b188df66b3b952194b993 |
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| cites | cdi_FETCH-LOGICAL-c359t-10d1400f6e9232aba182c53f5f8dadfc4de0c2b008e0b188df66b3b952194b993 |
| container_end_page | 1008 |
| container_issue | 7 |
| container_start_page | 1006 |
| container_title | IEEE electron device letters |
| container_volume | 33 |
| creator | Sungsik Lee Ahnood, A. Sambandan, S. Madan, A. Nathan, A. |
| description | We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation. |
| doi_str_mv | 10.1109/LED.2012.2193657 |
| format | article |
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By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2012.2193657</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amorphous semiconductor thin-film transistors (TFTs) ; Amorphous silicon ; Applied sciences ; density of subgap states (subgap DOS) ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; field-effect mobility ; Interface states ; Iron ; Logic gates ; Photoconductivity ; Semiconductor electronics. Microelectronics. Optoelectronics. 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By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.</description><subject>Amorphous semiconductor thin-film transistors (TFTs)</subject><subject>Amorphous silicon</subject><subject>Applied sciences</subject><subject>density of subgap states (subgap DOS)</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>field-effect mobility</subject><subject>Interface states</subject><subject>Iron</subject><subject>Logic gates</subject><subject>Photoconductivity</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Theoretical study. 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| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2012-07, Vol.33 (7), p.1006-1008 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Xplore (Online service) |
| subjects | Amorphous semiconductor thin-film transistors (TFTs) Amorphous silicon Applied sciences density of subgap states (subgap DOS) Electric, optical and optoelectronic circuits Electronics Exact sciences and technology field-effect mobility Interface states Iron Logic gates Photoconductivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Theoretical study. Circuits analysis and design Thin film transistors Transistors |
| title | Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors |
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