Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt

Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods v...

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 2012-08, Vol.25 (3), p.494-501
Main Authors: Jie Sun, Cole, M. T., Ahmad, S. A., Backe, O., Ive, T., Loffler, M., Lindvall, N., Olsson, E., Teo, K. B. K., Liu, J., Larsson, A., Yurgens, A., Haglund, A.
Format: Article
Language:English
Subjects:
ammonia
Applied sciences
Carbon
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
chemical vapour deposition
Circuit properties
Cross-disciplinary physics: materials science
rheology
Electric, optical and optoelectronic circuits
Electrodes
Electronics
Exact sciences and technology
Gallium nitride
Gallium nitrides
GaN
Gold
Graphene
III-V semiconductors
Integrated optoelectronics. Optoelectronic circuits
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microelectronic fabrication (materials and surfaces technology)
Nitrides
Optical and optoelectronic circuits
Optical imaging
Optoelectronic devices
Physics
Semiconductor device measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Substrates
Thin films
transparent electrodes
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Description
Summary:Direct formation of large-area carbon thin films on gallium nitride by chemical vapor deposition without metallic catalysts is demonstrated. A high flow of ammonia is used to stabilize the surface of the GaN (0001)/sapphire substrate during the deposition at 950°C. Various characterization methods verify that the synthesized thin films are largely sp 2 bonded, macroscopically uniform, and electrically conducting. The carbon thin films possess optical transparencies comparable to that of exfoliated graphene. This paper offers a viable route toward the use of carbon-based materials for future transparent electrodes in III-nitride optoelectronics, such as GaN-based light emitting diodes and laser diodes.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2012.2198676