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A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation

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Bibliographic Details
Published in:	Semiconductor science and technology 1997-04, Vol.12 (4), p.355-358
Main Authors:	Chain, Kenneth, Huang, Jian-hui, Duster, Jon, Ko, Ping K, Hu, Chenming
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility piezoresistance Physics
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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