A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation

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Published in:Semiconductor science and technology 1997-04, Vol.12 (4), p.355-358
Main Authors: Chain, Kenneth, Huang, Jian-hui, Duster, Jon, Ko, Ping K, Hu, Chenming
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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cited_by cdi_FETCH-LOGICAL-c412t-833b33e8b35b376485672c146ef81206ab199700870c8ca0fcc9f337057ed57c3
cites cdi_FETCH-LOGICAL-c412t-833b33e8b35b376485672c146ef81206ab199700870c8ca0fcc9f337057ed57c3
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container_issue 4
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container_title Semiconductor science and technology
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creator Chain, Kenneth
Huang, Jian-hui
Duster, Jon
Ko, Ping K
Hu, Chenming
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doi_str_mv 10.1088/0268-1242/12/4/002
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source Institute of Physics:Jisc Collections:IOP Publishing Journal Archive 1874-1998 (access period 2020 to 2024); Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
title A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation
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