High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs

An excellent on/off current ratio of 10 10 and a nearly ideal subthreshold slope of 65 mV/dec was confirmed in a p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable I - V characteristics were achieved with the p-InGaN cap layer under the gate electrode. A dry etching technique with a low-...

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Bibliographic Details
Published in:IEEE electron device letters 2012-09, Vol.33 (9), p.1249-1251
Main Authors: Deguchi, T., Kikuchi, T., Arai, M., Yamasaki, K., Egawa, T.
Format: Article
Language:English
Subjects:
AlGaN/GaN high-electron-mobility transistor (HEMT)
Aluminum gallium nitride
Applied sciences
Electronics
Etching
Exact sciences and technology
Gallium nitride
gate leakage current
HEMTs
Logic gates
MODFETs
on/off current ratio
p-InGaN
Plasmas
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:An excellent on/off current ratio of 10 10 and a nearly ideal subthreshold slope of 65 mV/dec was confirmed in a p-InGaN/AlGaN/GaN high-electron-mobility transistor. Favorable I - V characteristics were achieved with the p-InGaN cap layer under the gate electrode. A dry etching technique with a low-damage p-InGaN cap layer resulted in a significantly low leakage current of 10 -11 A/mm.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2204854