Superjunction IGBT Filling the Gap Between SJ MOSFET and Ultrafast IGBT

In this letter, we report E off -versus- V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off /dV ce >;0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to t...

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Bibliographic Details
Published in:IEEE electron device letters 2012-09, Vol.33 (9), p.1288-1290
Main Authors: Bauer, F., Nistor, I., Mihaila, A., Antoniou, M., Udrea, F.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar-to-unipolar transition
Compound structure devices
Current density
Doping
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Insulated gate bipolar transistors
Junctions
Other multijunction devices. Power transistors. Thyristors
Power MOSFET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
superjunction insulated-gate bipolar transistor (SJ IGBT)
superjunction MOSFET (SJ MOSFET)
Transconductance
Transistors
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Summary:In this letter, we report E off -versus- V ce tradeoff curves for vertical superjunction insulated-gate bipolar transistors (SJ IGBTs), exhibiting unusual inverse slopes dE off /dV ce >;0 in a transition region between purely unipolar and strongly bipolar device behaviors. This effect is due to the action of p-pillar hole current when depleting the drift layer of SJ IGBTs during turnoff and the impact of current gain on the transconductance. Such SJ IGBTs surpass by a very significant margin their superjunction MOSFET counterparts in terms of power-handling capability and on-state and turnoff losses, all at the same time.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2203092