Dark Current in Silicon Photomultiplier Pixels: Data and Model

The dark current behavior of the pixels forming the Si photomultiplier as a function of the applied overvoltage and operation temperature is studied. The data are modeled by assuming that dark current is caused by current pulses triggered by events of diffusion of single minority carriers injected f...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-09, Vol.59 (9), p.2410-2416
Main Authors: Pagano, Roberto, Corso, Domenico, Lombardo, Salvatore, Valvo, Giuseppina, Sanfilippo, Delfo Nunzio, Fallica, Giogio, Libertino, Sebania
Format: Article
Language:English
Subjects:
Applied sciences
Current measurement
Dark count (DC) rate
Dark current
Electronics
Exact sciences and technology
gain
Optoelectronic devices
Photonics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon photomultiplier (PM) (SiPM)
single pixels
temperature
Temperature distribution
Temperature measurement
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Summary:The dark current behavior of the pixels forming the Si photomultiplier as a function of the applied overvoltage and operation temperature is studied. The data are modeled by assuming that dark current is caused by current pulses triggered by events of diffusion of single minority carriers injected from the peripheral boundaries of the active area depletion layer and by thermal emission of carriers from Shockley-Read-Hall defects in the active area depletion layer.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2205689