Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility

• Published in: IEEE transactions on nanotechnology 2012-09, Vol.11 (5), p.902-906
• Main Authors: Najmzadeh, M., Tsuchiya, Y., Bouvet, D., Grabinski, W., Ionescu, A. M.
• Format: Article
• Language: English
• Subjects: Applied sciences; Cross sections; Cross-disciplinary physics: materials science; rheology; Electron mobility; Electronics; Exact sciences and technology; Local oxidation; local stressor; Logic gates; Materials science; micro-Raman spectroscopy; Microelectronic fabrication (materials and surfaces technology); MOSFET; MOSFETs; multi-gate; Nanocomposites; Nanomaterials; Nanoscale devices; Nanoscale materials and structures: fabrication and characterization; Nanowires; Oxidation; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Si nanowire; Silicon; Silicon substrates; strain engineering; Tensile stress; Transistors; uniaxial tensile stress
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2012.2205401

In this paper, we report for the first time making multi-gate buckled self-aligned dual Si nanowires including two sub-100 nm cross-sectional cores on bulk Si substrate using optical lithography, hard mask/spacer technology, and local oxidation. ≈0.8 GPa uniaxial tensile stress was measured on the buckled dual nanowires using micro-Raman spectroscopy. The buckled multigate dual Si nanowires show excellent electrical characteristics, e.g., 62 mV/decade and 42% low-field electron mobility enhancement due to uniaxial tensile stress in comparison to the non-strained device, all at V DS = 50 mV and 293 K.