Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High- \kappa Dielectrics

This paper presents a capacitance model and mobility extraction method through the use of tapered transmission line theory for accumulation-mode MOSCAP test structures. The analytical model accounts for the discrepancies commonly found when measuring the capacitance of nontraditional MOSCAP architec...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-10, Vol.59 (10), p.2662-2666
Main Authors: Bothe, K. M., von Hauff, P. A., Afshar, A., Foroughi-Abari, A., Cadien, K. C., Barlage, D. W.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Capacitance measurement
Channels
Devices
Dielectric, amorphous and glass solid devices
Dielectrics
Dimensional measurements
Educational institutions
Electron mobility
Electronics
Exact sciences and technology
Gallium nitride
Mathematical analysis
mobility extraction
MOS capacitors
Semiconductor device measurement
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Testing, measurement, noise and reliability
Transistors
Transmission line measurements
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Summary:This paper presents a capacitance model and mobility extraction method through the use of tapered transmission line theory for accumulation-mode MOSCAP test structures. The analytical model accounts for the discrepancies commonly found when measuring the capacitance of nontraditional MOSCAP architectures. Through fabrication of a planar MOSCAP, this model accurately reproduced consistent capacitance density measurements for several device dimensions and high-κ dielectric thicknesses. In this paper, the theoretical basis of the model extracts the effective electron mobility of the accumulation channel in the semiconductor without fabricating a transistor.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2209653