On the Contribution of Bulk Defects on Charge Pumping Current

Frequency-dependent charge pumping (CP) (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high- k gate stacks. However, conflicting interpretations of the CP frequency-defect depth relationship has led to controversial and in...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-11, Vol.59 (11), p.2943-2949
Main Authors: Ryan, J. T., Southwick, R. G., Campbell, J. P., Cheung, K. P., Suehle, J. S.
Format: Article
Language:English
Subjects:
Applied sciences
Atmospheric measurements
Bulk defects
Charge
Charge carrier processes
charge pumping (CP)
charge trapping
Defects
Devices
Electronics
Exact sciences and technology
Frequency measurement
high- k dielectrics
Iterative closest point algorithm
Logic gates
Materials
Particle measurements
Profiling
Pumping
Stacks
Substrates
Trapping
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Description
Summary:Frequency-dependent charge pumping (CP) (FD-CP) has emerged as a popular technique for studying the spatial and energetic distribution of defect centers in advanced high- k gate stacks. However, conflicting interpretations of the CP frequency-defect depth relationship has led to controversial and inconsistent findings between various groups. A key assumption is that most, if not all, bulk defect trapping/detrapping contributes to the CP current. In this paper, we show, experimentally using two independent measurements, that there is a large discrepancy between the total amount of bulk defect trapping/detrapping that occurs and the actual CP contribution due to these defects. We argue that the CP current due to bulk defects depends heavily upon the specific device geometry/technology, the minority-carrier lifetime, and FD-CP's general inability to function as a defect profiling tool.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2211880