Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise

Low-frequency (1/ f ) noise characteristics of 28-nm nMOSFETs with ZrO 2 /SiO 2 and HfO 2 /SiO 2 dielectric gate stacks have been investigated. The observed lower 1/ f noise level in ZrO 2 devices, as compared with that in HfO 2 devices, is attributed to the reduction in tunneling attenuation length...

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Bibliographic Details
Published in:IEEE electron device letters 2013-02, Vol.34 (2), p.151-153
Main Authors: Bo Chin Wang, San Lein Wu, Yu Ying Lu, Shoou Jinn Chang, Jone Fang Chen, Shih Chang Tsai, Che Hua Hsu, Chih Wei Yang, Cheng Guo Chen, Cheng, O., Po Chin Huang
Format: Article
Language:English
Subjects:
Applied sciences
Carrier number fluctuation
Dielectrics
Electronics
Exact sciences and technology
Hafnium compounds
Logic gates
low-frequency (\hbox{1}/f) noise characteristics
MOSFETs
Noise
random telegraph noise (RTN)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Transistors
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Summary:Low-frequency (1/ f ) noise characteristics of 28-nm nMOSFETs with ZrO 2 /SiO 2 and HfO 2 /SiO 2 dielectric gate stacks have been investigated. The observed lower 1/ f noise level in ZrO 2 devices, as compared with that in HfO 2 devices, is attributed to the reduction in tunneling attenuation length and in trap density simultaneously. Experimental results showed that the trap behavior of ZrO 2 /SiO 2 dielectric gate stack changes not only the trap location from a high- k layer to a SiO 2 interfacial layer but also the noise-dominated mechanism from carrier number fluctuation to the unified fluctuation model, which includes number fluctuation and correlated mobility fluctuation.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2226698