Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La203 passivation

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Published in:Applied surface science 2013, Vol.264, p.783-786
Main Authors: LI, Xue-Fei, LIU, Xiao-Jie, CAO, Yan-Qiang, LI, Ai-Dong, HUI LI, DI WU
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
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container_issue
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container_title Applied surface science
container_volume 264
creator LI, Xue-Fei
LIU, Xiao-Jie
CAO, Yan-Qiang
LI, Ai-Dong
HUI LI
DI WU
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source ScienceDirect Freedom Collection
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Physics
title Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La203 passivation
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