In0.5Ga0.5As-Based Metal - Oxide - Semiconductor Capacitor on GaAs Substrate Using Metal - Organic Chemical Vapor Deposition

• Published in: IEEE transactions on electron devices 2013-01, Vol.60 (1), p.235-240
• Main Authors: Nguyen, H. Q., Trinh, H. D., Chang, E. Y., Lee, C. T., Shin Yuan Wang, Yu, H. W., Hsu, C. H., Nguyen, C. L.
• Format: Article
• Language: English
• Subjects: Aluminum oxide; Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Dielectric, amorphous and glass solid devices; Electronics; Exact sciences and technology; Gallium arsenide; hbox{Al}_{2}\hbox{O}_{3}; Indium gallium arsenide; Indium phosphide; InGaAs; Materials science; metal-organic chemical vapor deposition (MOCVD); metal-oxide-semiconductor (MOS) capacitor (MOSCAP); Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); MOCVD; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; Substrates
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2012.2228201

We demonstrate the good-performance In 0.5 Ga 0.5 As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In 0.5 Ga 0.5 As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 10 6 cm -2 . The performance of the MOSCAPs is comparable to that of In 0.53 Ga 0.47 As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density D it values of 5 × 10 11 -2 × 10 12 eV -1 · cm -2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In 0.5 Ga 0.5 As/GaAs MOSCAPs obtained by conductance methods were shown.