Patterned Bit Cell Arrangement and Broadening of Switching Field Distribution Caused by Magneto-Static Interactions

Patterned media technology is a promising approach for future high density magnetic data storage. The bit-to-bit spacing becomes smaller as recording density increases. As a result, the magneto-static field (H d ) from the surrounding bits becomes stronger, and contributes more to the broadening of...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2013-01, Vol.49 (1), p.478-482
Main Authors: Xu, Shu, Liu, Jie, Chen, Jincai, Liu, Bo
Format: Article
Language:English
Subjects:
Bit cell arrangement
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Magnetic switching
Manufacturing
manufacturing induced deviations
Materials science
Media
Other topics in materials science
patterned media
Perpendicular magnetic recording
Physics
Switches
switching field distribution
Writing
Citations: Items that this one cites
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Summary:Patterned media technology is a promising approach for future high density magnetic data storage. The bit-to-bit spacing becomes smaller as recording density increases. As a result, the magneto-static field (H d ) from the surrounding bits becomes stronger, and contributes more to the broadening of the switching field distribution (SFD) of targeted bit. This paper reports the investigations between possible bit-cell arrangements and SFD broadening caused by the magneto-static field. The possible bit-cell arrangements are categorized into three groups-square arrangement, isosceles triangular arrangement, and equilateral triangular arrangement. The influences of manufacturing induced deviations, including bit-cell position offset and bit-cell size variation, over the H d are also simulated. The results suggested that isosceles triangular arrangement can reduce the SFD broadening, without increasing the requirement on track positioning accuracy.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2012.2207733