Mechanism for Leakage Reduction by La Incorporation in a HfO2/SiO2/Si Gate Stack

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Bibliographic Details
Published in:IEEE electron device letters 2013-03, Vol.34 (3), p.348-350
Main Authors: MANABE, Kenzo, WATANABE, Koji, JAGANNATHAN, Hemanth, PARUCHURI, Vamsi K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2242040