AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High-κ Oxynitride TaOxNy Gate Dielectric

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Bibliographic Details
Published in:IEEE electron device letters 2013, Vol.34 (3), p.375-377
Main Authors: SATO, Taku, OKAYASU, Junich, TAKIKAWA, Masahiko, SUZUKI, Toshi-Kazu
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Electronics
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563