A New Millimeter-Wave Fixture Deembedding Method Based on Generalized Cascade Network Model

• Published in: IEEE electron device letters 2013-03, Vol.34 (3), p.447-449
• Main Authors: Loo, X. S., Yeo, K. S., Chew, K. W. J., Chan, L. H. K., Ong, S. N., Do, M. A., Boon, C. C.
• Format: Article
• Language: English
• Subjects: Applied sciences; Circuit properties; CMOS integrated circuits; CMOS technology; Couplings; Design. Technologies. Operation analysis. Testing; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Integrated circuits; Layout; Metals; Microwave and submillimeter wave devices, electron transfer devices; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Millimeter wave transistors; millimeter-wave field-effect transistors; scattering matrices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2237157

In this letter, a universal cascade-based deembedding technique was presented for on-wafer characterization of the RF CMOS device. As compared with existing deembedding approaches, it is developed based on unique combinations of two THRU structures that enable efficient deembedding of fixture parasitics without any inaccurate lumped approximation or requirement of known standards. The proposed deembedding technique is validated on 0.13- μm CMOS devices and has been proven to be more accurate than existing lumped and cascade-based deembedding techniques. As a result, it gives deeper physical prediction on transistor gate capacitances and transconductance. Therefore, it is highly suitable to be applied for device characterization at millimeter-wave frequencies.