Surface-activating-bonding-based low-resistance Si/III-V junctions

• Published in: Electronics letters 2013-06, Vol.49 (13), p.830-832
• Main Authors: Liang, J, Nishida, S, Morimoto, M, Shigekawa, N
• Format: Article
• Language: English
• Subjects: Applied sciences; current‐voltage characteristics; doping concentrations; electrical loss; electrical properties; elemental semiconductors; Energy; Exact sciences and technology; GaAs/Si; GaAs−Si; gallium arsenide; gallium compounds; III‐V semiconductors; impurity concentration; impurity states; indium compounds; interface resistance; low‐resistance Si‐III‐V junctions; Natural energy; ohmic‐like properties; Organic and inorganic circuits and devices; Photovoltaic conversion; pn junctions; p‐n heterojunctions; SAB; semiconductor doping; semiconductor materials; Si/InGaP; Si/Si; silicon; Si−InGaP; Si−Si; solar cells; Solar cells. Photoelectrochemical cells; Solar energy; surface activated bonding; surface‐activating‐bonding; tandem solar cells
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2013.1553

The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface-activated-bonding (SAB), were investigated by measuring their current-voltage (I-V) characteristics. The I-V characteristics of p+-GaAs/n++-Si, p+-GaAs/n+-Si, p+-Si/n+-Si, p++-Si/n+-InGaP, and p+-Si/n+-InGaP junctions showed ohmic-like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells.