Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in TaOx Bipolar-ReRAM

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Bibliographic Details
Published in:IEEE electron device letters 2013-06, Vol.34 (6), p.762-764
Main Authors: NINOMIYA, Takeki, MURAOKA, Shunsaku, ZHIQIANG WEI, YASUHARA, Ryutaro, KATAYAMA, Koji, TAKAGI, Takeshi
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2258653