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Melt zone growth of Ge-rich Ge1−xSix bulk crystals

Melt zone growth of Ge-rich SiGe alloy was performed on 24mm diameter by >90mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and f...

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Bibliographic Details
Published in:Journal of crystal growth 2013-08, Vol.377, p.147-152
Main Authors: Kostylev, I., Woodacre, J.K., Lee, Y.P., Klages, P., Labrie, D.
Format: Article
Language:English
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Summary:Melt zone growth of Ge-rich SiGe alloy was performed on 24mm diameter by >90mm long feedrods using a resistive furnace. The Si composition along the growth axis of one sample showed a trend where the composition first rapidly decreased, then smoothly transitioned into a plateau-like region, and finally dropped in a Bridgman-like manner near the end of processing. A simple one-dimensional model including full mixing of the melt constituents and an equilibrium Si segregation coefficient given by the phase diagram of SiGe was used to explain the results. The model is in good agreement with the Si composition profile along the growth axis. •Melt zone growth of Ge-rich SiGe alloy was performed on large diameter feedrods.•Axial Si composition along the growth axis is typical of melt zone growth.•Simple 1D melt zone model was used to explain the results.•Full mixing within the melt zone and the equilibrium k was used in the model.•Good agreement between theory and experiment was obtained for two samples.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2013.05.012