Hole Mobility Enhancement in Compressively Strained Ge0.93Sn0.07 pMOSFETs

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Bibliographic Details
Published in:IEEE electron device letters 2013-07, Vol.34 (7), p.831-833
Main Authors: SUYOG GUPTA, HUANG, Yi-Chiau, YIHWAN KIM, SANCHEZ, Errol, SARASWAT, Krishna C
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2259573