Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation: Gallium nitride electronics

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Bibliographic Details
Published in:Semiconductor science and technology 2013, Vol.28 (7)
Main Authors: RAMANAN, Narayanan, LEE, Bongmook, KIRKPATRICK, Casey, SURI, Rahul, MISRA, Veena
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0268-1242
1361-6641