Loading…
A new p-Ni1−xO : Li/n-Si heterojunction solar cell fabricated by RF magnetron sputtering
This study reports the fabrication of p-type Ni1−xO : Li/n-Si heterojunction solar cells (HJSCs) by depositing Li-doped Ni1−xO (p-Ni1−xO : Li) on a n-Si substrate (P+/n) using RF magnetron sputtering. Films deposited on glass substrates at various working pressures were first analysed to estimate th...
Saved in:
Published in: | Journal of physics. D, Applied physics Applied physics, 2013-07, Vol.46 (27) |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | This study reports the fabrication of p-type Ni1−xO : Li/n-Si heterojunction solar cells (HJSCs) by depositing Li-doped Ni1−xO (p-Ni1−xO : Li) on a n-Si substrate (P+/n) using RF magnetron sputtering. Films deposited on glass substrates at various working pressures were first analysed to estimate the optoelectrical properties of p-Ni1−xO : Li thin films. These experimental results show that the best working pressure was 6 mTorr, which produced a surface roughness of 2.85 nm, a grain size of 19.8 nm, a resistivity of 2.7 Ω cm, a visible transmittance of 49.16%, a work function of 5.32 eV, and a refractive index of 2.54. Although the p-Ni1−xO : Li thin film has a relatively high work function, its conversion efficiency is 2.338% (Voc: 345 mV, Jsc: 22.048 mA cm−2, and FF: 0.307). This study proposes that reduce interface states and improve the optoelectrical properties of p-NiO are two important issues because they can directly and significantly affect the conversion efficiency of p-Ni1−xO : Li/n-Si HJSC. In summary, this high Voc value indicates that p-Ni1−xO : Li thin film is more suitable than ZnO/n-Si structures as an emitter layer for transparent conducting oxide/n-Si HJSC applications. |
---|---|
ISSN: | 0022-3727 1361-6463 |
DOI: | 10.1088/0022-3727/46/27/275104 |