Activation of an intense near band edge emission from ZnTe/ZnMgTe core/shell nanowires grown on silicon

The absence of luminescence in the near band edge energy region of Te-anion based semiconductor nanowires grown by gold catalyst assisted molecular beam epitaxy has strongly limited their applications in the field of photonics. In this paper, an enhancement of the near band edge emission intensity f...

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Bibliographic Details
Published in:Nanotechnology 2013-09, Vol.24 (36), p.365201-365201
Main Authors: Wojnar, P, Szymura, M, Zaleszczyk, W, K opotowski, Janik, E, Wiater, M, Baczewski, L T, Kret, S, Karczewski, G, Kossut, J, Wojtowicz, T
Format: Article
Language:English
Subjects:
Catalytic methods
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Defects
Exact sciences and technology
Gallium arsenide
Gallium arsenides
Materials science
Methods of nanofabrication
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanowires
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum wires
Semiconductors
Shells
Silicon substrates
Zinc tellurides
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Summary:The absence of luminescence in the near band edge energy region of Te-anion based semiconductor nanowires grown by gold catalyst assisted molecular beam epitaxy has strongly limited their applications in the field of photonics. In this paper, an enhancement of the near band edge emission intensity from ZnTe/ZnMgTe core/shell nanowires grown on Si substrates is reported. A special role of the use of Si substrates instead of GaAs substrates is emphasized, which results in an increase of the near band edge emission intensity by at least one order of magnitude accompanied by a simultaneous reduction of the defect related luminescence. A possible explanation of this effect relies on the presence of Ga-related deep level defects in structures grown on GaAs substrates, which are absent when Si substrates are used. Monochromatic mapping of the cathodoluminescence clearly confirms that the observed emission originates, indeed, from the ZnTe/ZnMgTe core/shell nanowires, whereas individual objects are studied by means of microphotoluminescence.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/24/36/365201