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500 °C Bipolar Integrated OR/NOR Gate in 4H-SiC

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Bibliographic Details
Published in:IEEE electron device letters 2013, Vol.34 (9), p.1091-1093
Main Authors: LANNI, Luigia, BENGT GUNNAR MALM, ÖSTLING, Mikael, ZETTERLING, Carl-Mikael
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2272649