High-Speed, Enhancement-Mode GaN Power Switch With Regrown n+ GaN Ohmic Contacts and Staircase Field Plates

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Bibliographic Details
Published in:IEEE electron device letters 2013, Vol.34 (9), p.1118-1120
Main Authors: BROWN, David F, SHINOHARA, Keisuke, SANTOS, Dayward, BURNHAM, Shawn D, ROBINSON, John F, ZEHNDER, Daniel, JUNGJIN KIM, Samuel, OH, Thomas C, MICOVIC, Miroslav, CORRION, Andrea L, RONGMING CHU, WILLIAMS, Adam, WONG, Joel C, ALVARADO-RODRIGUEZ, Ivan, GRABAR, Robert, JOHNSON, Michael, BUTLER, Colleen M
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Interfaces
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2273172