Smooth Bosch Etch for Improved Si Diodes

A modified Bosch process is used to reduce leakage current resulting from surface damage and roughness for high aspect ratio pillars fabricated from Si p-i-n structures. C 4 F 8 is used during both the etch and passivation steps to achieve a scallop-free and vertical structure. A 5× decrease in both...

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Bibliographic Details
Published in:IEEE electron device letters 2013-10, Vol.34 (10), p.1226-1228
Main Authors: Voss, Lars F., Qinghui Shao, Conway, Adam M., Reinhardt, Cathy E., Graff, Robert T., Nikolic, Rebecca J.
Format: Article
Language:English
Subjects:
Applied sciences
Charge carrier density
Compound structure devices
Diode
Diodes
Electronics
etch
Etching
Exact sciences and technology
Leakage currents
Passivation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
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Summary:A modified Bosch process is used to reduce leakage current resulting from surface damage and roughness for high aspect ratio pillars fabricated from Si p-i-n structures. C 4 F 8 is used during both the etch and passivation steps to achieve a scallop-free and vertical structure. A 5× decrease in both the reverse bias leakage current and corresponding improvement in effective carrier density, charge density, depletion width, and minority carrier lifetime are observed using this process, indicating that surface charge states are decreased using this process. This can impact a number of 3-D next-generation devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2278374