Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances

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Bibliographic Details
Published in:IEEE electron device letters 2013-10, Vol.34 (10), p.1328-1330
Main Authors: YUCHEN DU, HAN LIU, NEAL, Adam T, MENGWEI SI, YE, Peide D
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2277311