AlGaN/GaN Three-Terminal Junction Devices for Rectification and Transistor Applications on 3C-SiC/Si Pseudosubstrates : GaN ELECTRONIC DEVICES

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013, Vol.60 (10), p.3047-3052
Main Authors: HILLER, Lars, PEZOLDT, Jörg
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646