Effects of channel thickness on electrical properties and stability of zinc tin oxide thin-film transistors

We investigated the effects of channel thickness (tch) on the electrical properties and the bias stress-induced instability of zinc tin oxide (ZTO, Zn : Sn = 4 : 1) thin-film transistors (TFTs). With increasing tch, the electrical properties of the TFTs showed a trend: threshold voltage (Vth) decrea...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2013-11, Vol.46 (47), p.475106-5
Main Authors: Yun, Myeong Gu, Kim, So Hee, Ahn, Cheol Hyoun, Cho, Sung Woon, Cho, Hyung Koun
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Electrical properties
Electronics
Exact sciences and technology
Instability
Molecular electronics, nanoelectronics
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stability
Thin films
Threshold voltage
Transistors
Trapping
Zinc
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Summary:We investigated the effects of channel thickness (tch) on the electrical properties and the bias stress-induced instability of zinc tin oxide (ZTO, Zn : Sn = 4 : 1) thin-film transistors (TFTs). With increasing tch, the electrical properties of the TFTs showed a trend: threshold voltage (Vth) decreased and field-effect mobility (μFE) increased; on the other hand, subthreshold swing and hysteresis characteristics did not show any significant change. The positive bias stress (PBS) test and the following analysis by the stretched-exponential equation revealed that the PBS-induced threshold voltage shift (ΔVth) decreased and the extracted characteristic trapping time (τ) increased with increasing tch. This thickness-dependence of PBS instability cannot be explained by charge trapping/injection model or defect creation model but can be well explained by less ambient effect at the backchannel due to less gate field through a thicker film.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/46/47/475106