Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-12, Vol.60 (12), p.4119-4124
Main Authors: BOTHE, Kyle M, VON HAUFF, Peter A, AFSHAR, Amir, FOROUGHI-ABARI, Ali, CADIEN, Kenneth C, BARLAGE, Douglas W
Format: Article
Language:English
Subjects:
Applied sciences
Dielectric, amorphous and glass solid devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2283802