Fabrication Pathways of p–n Cu2O Homojunction Films by Electrochemical Deposition Processing

• Published in: Journal of physical chemistry. C 2013-12, Vol.117 (50), p.26426-26431
• Main Authors: Liau, Leo Chau-Kuang, Lin, Yu-Chieh, Peng, Yong-Jie
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Electrodeposition, electroplating; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/jp405715c

Fabrication of p–n Cu2O homojunction films was demonstrated by multiple steps of electrochemical deposition (ECD) processing with the adjustment of the deposition periods. The deposited Cu2O films, p-type and n-type Cu2O films, using ECD processing were, respectively, characterized using several analytical tests. Fabrication strategies of p–n Cu2O homojunction films were proposed using the sequential deposition steps of p-Cu2O and n-Cu2O films. Results showed that the prepared Cu2O films were influenced by the ECD conditions and displayed different semiconductor, crystal, and morphological properties. A p-type Cu2O (p-Cu2O) film can be transformed into a n-type Cu2O (n-Cu2O) film by the control of the ECD deposition periods. Different positions of p- and n-Cu2O layers located in the p–n homojunction devices can be produced by the adjustment of the deposition periods in the ECD processing steps. The interaction of n-Cu2O grown on a p-Cu2O film during the ECD processing was revealed to interpret the formation of the p–n homojunction devices. The design and fabrication of the p–n homojunction films were discussed by the fabrication strategy using the multiple ECD processing steps.