High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation

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Bibliographic Details
Published in:IEEE electron device letters 2013-12, Vol.34 (12), p.1497-1499
Main Authors: SHU YANG, ZHIKAI TANG, WONG, King-Yuen, LIN, Yu-Syuan, CHENG LIU, YUNYOU LU, SEN HUANG, CHEN, Kevin J
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2286090