Interpreting area of pinched memristor hysteresis loop

It is shown that the area of the pinched hysteresis loop of the current-controlled ideal memristor represents the quantity ‘content’, which was introduced into the theory of nonlinear systems by Millar in 1951. Two parts of the content are identified which correspond to distinct parts of the area be...

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Bibliographic Details
Published in:Electronics letters 2014-01, Vol.50 (2), p.74-75
Main Authors: Biolek, D, Biolek, Z, Biolková, V
Format: Article
Language:English
Subjects:
Applied sciences
Circuits and systems
current‐controlled ideal memristor
Design. Technologies. Operation analysis. Testing
Dynamical systems
Electric potential
Electronics
Exact sciences and technology
Harmonics
Higher harmonics
Hysteresis loops
Integrated circuits
Memory devices
memristor memory
memristors
nonlinear systems
pinched memristor hysteresis loop
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
sinusoidal current
Voltage
voltage‐controlled memristor
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Summary:It is shown that the area of the pinched hysteresis loop of the current-controlled ideal memristor represents the quantity ‘content’, which was introduced into the theory of nonlinear systems by Millar in 1951. Two parts of the content are identified which correspond to distinct parts of the area below the v–i characteristic of the memristor: one is related to the power conditions and the other to the instantaneous state of the memristor memory. It is demonstrated for a memristor driven by the sinusoidal current that the power part of the content depends on the fundamental harmonic of the voltage, whereas the memory part of the content is given only by the higher harmonics of the voltage, and only by the even harmonics in the case of entirely closed loops. The analogous conclusions also hold for the voltage-controlled memristor.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2013.3108