Separation of Comer Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

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Bibliographic Details
Published in:IEEE electron device letters 2014, Vol.35 (1), p.51-53
Main Authors: KYUNGHWAN LEE, MYOUNGGON KANG, SEONGJUN SEO, DUCKSEOUNG KANG, DONG HUA LI, YUCHUL HWANG, HYUNGCHEOL SHIN
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Design. Technologies. Operation analysis. Testing
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0741-3106
1558-0563